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Amplification and wave mixing of induced and spontaneous emission in semiconductor laser amplifiers

Identifieur interne : 00DA32 ( Main/Repository ); précédent : 00DA31; suivant : 00DA33

Amplification and wave mixing of induced and spontaneous emission in semiconductor laser amplifiers

Auteurs : RBID : Pascal:03-0268560

Descripteurs français

Pascal (Inist)
- Laser semiconducteur, Amplificateur optique, Etude théorique, Equation Maxwell Bloch, Etude expérimentale, Emission spontanée amplifiée, Emission stimulée, Mélange onde, Puissance sortie, Indium arséniure, Gallium arséniure, Laser InGaAs, As Ga In, 4255P, 4265H.

English descriptors

KwdEn :
- Amplified spontaneous emission, Experimental study, Gallium arsenides, Indium arsenides, Maxwell Bloch equation, Optical amplifier, Output power, Semiconductor lasers, Stimulated emission, Theoretical study, Wave mixing.

Abstract

We theoretically describe and experimentally investigate the spatio-spectral wave mixing of induced and spontaneous emission in large-area InGaAs-semiconductor laser amplifiers. The dynamic light-matter-coupling is described by a spatially resolved theory based on Maxwell-Bloch-Langevin equations, taking into account many-body-carrier interactions, energy transfer between the carrier and phonon systems and, in particular, the spatio-temporal interplay of stimulated and amplified spontaneous emission and the noise caused by spontaneous emission. Our numerical model reveals the fundamental physical processes which are responsible for the spectral power distribution of the amplified laser light and predicts the emission properties of high-power semiconductor laser amplifiers, such as emission spectra and input power-output power characteristics.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Amplification and wave mixing of induced and spontaneous emission in semiconductor laser amplifiers</title>
<author><name sortKey="Gehrig, E" uniqKey="Gehrig E">E. Gehrig</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Theoretical Quantum Electronics, Institute of Technical Physics, DLR, Pfaffenwaldring 38-40</s1>
<s2>70569 Stuttgart</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>70569 Stuttgart</wicri:noRegion>
<wicri:noRegion>Pfaffenwaldring 38-40</wicri:noRegion>
<wicri:noRegion>70569 Stuttgart</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Hess, O" uniqKey="Hess O">O. Hess</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Theoretical Quantum Electronics, Institute of Technical Physics, DLR, Pfaffenwaldring 38-40</s1>
<s2>70569 Stuttgart</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>70569 Stuttgart</wicri:noRegion>
<wicri:noRegion>Pfaffenwaldring 38-40</wicri:noRegion>
<wicri:noRegion>70569 Stuttgart</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Seibert, C" uniqKey="Seibert C">C. Seibert</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>University of Kaiserslautern, Fachbereich Physik, Erwin-Schrödinger-Strasse 46</s1>
<s2>67663 Kaiserlautern</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
<orgName type="university">Université de technologie de Kaiserslautern</orgName>
</affiliation>
</author>
<author><name sortKey="Woll, D" uniqKey="Woll D">D. Woll</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>University of Kaiserslautern, Fachbereich Physik, Erwin-Schrödinger-Strasse 46</s1>
<s2>67663 Kaiserlautern</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
<orgName type="university">Université de technologie de Kaiserslautern</orgName>
</affiliation>
</author>
<author><name sortKey="Wallenstein, R" uniqKey="Wallenstein R">R. Wallenstein</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>University of Kaiserslautern, Fachbereich Physik, Erwin-Schrödinger-Strasse 46</s1>
<s2>67663 Kaiserlautern</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
<orgName type="university">Université de technologie de Kaiserslautern</orgName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">03-0268560</idno>
<date when="2003">2003</date>
<idno type="stanalyst">PASCAL 03-0268560 INIST</idno>
<idno type="RBID">Pascal:03-0268560</idno>
<idno type="wicri:Area/Main/Corpus">00D334</idno>
<idno type="wicri:Area/Main/Repository">00DA32</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0946-2171</idno>
<title level="j" type="abbreviated">Appl. phys., B Lasers opt. : (Print)</title>
<title level="j" type="main">Applied physics. B, Lasers and optics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amplified spontaneous emission</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Indium arsenides</term>
<term>Maxwell Bloch equation</term>
<term>Optical amplifier</term>
<term>Output power</term>
<term>Semiconductor lasers</term>
<term>Stimulated emission</term>
<term>Theoretical study</term>
<term>Wave mixing</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Laser semiconducteur</term>
<term>Amplificateur optique</term>
<term>Etude théorique</term>
<term>Equation Maxwell Bloch</term>
<term>Etude expérimentale</term>
<term>Emission spontanée amplifiée</term>
<term>Emission stimulée</term>
<term>Mélange onde</term>
<term>Puissance sortie</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Laser InGaAs</term>
<term>As Ga In</term>
<term>4255P</term>
<term>4265H</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We theoretically describe and experimentally investigate the spatio-spectral wave mixing of induced and spontaneous emission in large-area InGaAs-semiconductor laser amplifiers. The dynamic light-matter-coupling is described by a spatially resolved theory based on Maxwell-Bloch-Langevin equations, taking into account many-body-carrier interactions, energy transfer between the carrier and phonon systems and, in particular, the spatio-temporal interplay of stimulated and amplified spontaneous emission and the noise caused by spontaneous emission. Our numerical model reveals the fundamental physical processes which are responsible for the spectral power distribution of the amplified laser light and predicts the emission properties of high-power semiconductor laser amplifiers, such as emission spectra and input power-output power characteristics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0946-2171</s0>
</fA01>
<fA03 i2="1"><s0>Appl. phys., B Lasers opt. : (Print)</s0>
</fA03>
<fA05><s2>76</s2>
</fA05>
<fA06><s2>3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Amplification and wave mixing of induced and spontaneous emission in semiconductor laser amplifiers</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>GEHRIG (E.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>HESS (O.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SEIBERT (C.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>WOLL (D.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>WALLENSTEIN (R.)</s1>
</fA11>
<fA14 i1="01"><s1>Theoretical Quantum Electronics, Institute of Technical Physics, DLR, Pfaffenwaldring 38-40</s1>
<s2>70569 Stuttgart</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>University of Kaiserslautern, Fachbereich Physik, Erwin-Schrödinger-Strasse 46</s1>
<s2>67663 Kaiserlautern</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>285-288</s1>
</fA20>
<fA21><s1>2003</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16194B</s2>
<s5>354000111025560140</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2003 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>14 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>03-0268560</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics. B, Lasers and optics : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We theoretically describe and experimentally investigate the spatio-spectral wave mixing of induced and spontaneous emission in large-area InGaAs-semiconductor laser amplifiers. The dynamic light-matter-coupling is described by a spatially resolved theory based on Maxwell-Bloch-Langevin equations, taking into account many-body-carrier interactions, energy transfer between the carrier and phonon systems and, in particular, the spatio-temporal interplay of stimulated and amplified spontaneous emission and the noise caused by spontaneous emission. Our numerical model reveals the fundamental physical processes which are responsible for the spectral power distribution of the amplified laser light and predicts the emission properties of high-power semiconductor laser amplifiers, such as emission spectra and input power-output power characteristics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B65H</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Amplificateur optique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Optical amplifier</s0>
<s5>06</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Amplificador óptico</s0>
<s5>06</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Etude théorique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Theoretical study</s0>
<s5>08</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Equation Maxwell Bloch</s0>
<s5>09</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Maxwell Bloch equation</s0>
<s5>09</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>10</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>10</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Emission spontanée amplifiée</s0>
<s5>13</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Amplified spontaneous emission</s0>
<s5>13</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Emission stimulée</s0>
<s5>15</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Stimulated emission</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Mélange onde</s0>
<s5>22</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Wave mixing</s0>
<s5>22</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Mezcla onda</s0>
<s5>22</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Puissance sortie</s0>
<s5>29</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Output power</s0>
<s5>29</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Potencia salida</s0>
<s5>29</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>50</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>50</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>51</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>51</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Laser InGaAs</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>4255P</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>4265H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fN21><s1>174</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Amplification and wave mixing of induced and spontaneous emission in semiconductor laser amplifiers

Amplification and wave mixing of induced and spontaneous emission in semiconductor laser amplifiers

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri